Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics

Wei Lu

doi:10.1117/12.318100

11 August 1998 Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics

Wei Lu

Author Affiliations +

Proceedings Volume 3553, Detectors, Focal Plane Arrays, and Imaging Devices II; (1998) https://doi.org/10.1117/12.318100
Event: Photonics China '98, 1998, Beijing, China

Abstract

This paper briefly presents the recent development of IR physics and photo-electronic device, the HgCdTe detector is successfully used in the scanning radiometer on the meteorological satellites. As an important developing direction for the photo-electronic device, the low dimensional semiconductor structures are investigated. The interface intermixing technique has been developed to modify the energy band structure of multi-quantum wells and consequently response wavelength of the quantum well IR photoconductive detector. The quantum wires have been successfully grown and demonstrate good optical properties.

Citation Download Citation

Wei Lu, Wei Lu, } "Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); doi: 10.1117/12.318100; https://doi.org/10.1117/12.318100

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