11 August 1998 Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics
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Abstract
This paper briefly presents the recent development of IR physics and photo-electronic device, the HgCdTe detector is successfully used in the scanning radiometer on the meteorological satellites. As an important developing direction for the photo-electronic device, the low dimensional semiconductor structures are investigated. The interface intermixing technique has been developed to modify the energy band structure of multi-quantum wells and consequently response wavelength of the quantum well IR photoconductive detector. The quantum wires have been successfully grown and demonstrate good optical properties.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Lu, Wei Lu, } "Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); doi: 10.1117/12.318100; https://doi.org/10.1117/12.318100
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