Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics

Wei Lu

doi:10.1117/12.318100

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11 August 1998 Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics

Wei Lu

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Proceedings Volume 3553, Detectors, Focal Plane Arrays, and Imaging Devices II; (1998) https://doi.org/10.1117/12.318100
Event: Photonics China '98, 1998, Beijing, China

Abstract

This paper briefly presents the recent development of IR physics and photo-electronic device, the HgCdTe detector is successfully used in the scanning radiometer on the meteorological satellites. As an important developing direction for the photo-electronic device, the low dimensional semiconductor structures are investigated. The interface intermixing technique has been developed to modify the energy band structure of multi-quantum wells and consequently response wavelength of the quantum well IR photoconductive detector. The quantum wires have been successfully grown and demonstrate good optical properties.

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Wei Lu "Development of infrared physics and photoelectronic technique at Shanghai Institute of Technical Physics", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); https://doi.org/10.1117/12.318100

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