11 August 1998 MBE growth of HgCdTe for infrared focal plane arrays
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The recent progress in MBE growth of HgCdTe at the Epitaxy Research Center for Advanced Materials, and the National Laboratory for Infrared Physics is described. It was found that the surface morphology is sensitive to the growth temperature and the flux ratio. The compositional reproducibility studied in a limited number of samples showed that a STDDEV for x-values of 0.0017 deviated from an average value of 0.229 was obtained. The epilayers showed excellent compositional uniformity across 2-inch wafers, the relative deviations for x-value and thickness were found to be 0.18 percent and 2.19 percent respectively. Ellipsometer was used for real-time monitoring the compositional variations during growth. The post growth annealing process was found to be effective in reducing the dislocation density, a reduction in dislocation density by approximately 50 percent could be obtained even by approximately 250 degrees C low temperature annealing. Electrical properties of epilayers are described, and a p-type in situ vacuum annealing process was demonstrated. MBE grown p-HgCdTe epilayers were successfully incorporated into 32 X 32 focal plane arrays detectors.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Li He, Li He, Jianrong Yang, Jianrong Yang, Shanli Wang, Shanli Wang, Meifang Yu, Meifang Yu, Yanq Wu, Yanq Wu, Yimin Qiao, Yimin Qiao, Xinqiang Chen, Xinqiang Chen, Weizheng Fang, Weizheng Fang, Qingyao Zhang, Qingyao Zhang, Yongsheng Gui, Yongsheng Gui, Junhao Chu, Junhao Chu, "MBE growth of HgCdTe for infrared focal plane arrays", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); doi: 10.1117/12.318080; https://doi.org/10.1117/12.318080


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