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14 August 1998 Femtosecond transient transmission studies of GaAs thin film
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Abstract
Femtosecond transient transmission measurements are used to investigate the scattering and relaxation dynamics of nonequilibrium carriers in GaAs thin film. With a nonequilibrium energy-balance model, the cooling process of hot carriers via emission of phonons is simulated. It is found that, the fitting parameter (lambda) is close to the Frohlich constant (alpha) F qualitatively and decreases with increasing excited carrier density. It reveals that the carrier-LO phonon coupling is the main way of the cooling of hot carriers and the coupling will be weaken by the nonequilibrium phonon effect.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Feipeng Pi "Femtosecond transient transmission studies of GaAs thin film", Proc. SPIE 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II, (14 August 1998); https://doi.org/10.1117/12.318244
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