Photoluminescence of GaAlAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

Xiaowei Song; Yi Qu; Mei Li; Xin Gao; Xueqian Li; Xingde Zhang

doi:10.1117/12.318248

14 August 1998 Photoluminescence of GaAlAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

Xiaowei Song, Yi Qu, Mei Li, Xin Gao, Xueqian Li, Xingde Zhang

Proceedings Volume 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II; (1998) https://doi.org/10.1117/12.318248
Event: Photonics China '98, 1998, Beijing, China

Abstract

In this paper we will report GaAlAs/GaAs gradient refraction index separate confinement quantum wells structures by MOCVD growth and its optical properties. The sample were characterized by high-resolution photoluminescence measurements. For 8 nm single quantum well, the excitation luminescence spectra at 10 K are characterized by transitions which has a linewidth (FWHM) of 6.2 nm and large intensity, indicating abrupt GaAlAs/GaAs interface. The shift of X(e-hh) peak position versus the excitation level are also observed. The results of PL measurement show that sample quality has met the requirement of design and proven to be satisfactory.

Citation Download Citation

Xiaowei Song, Yi Qu, Mei Li, Xin Gao, Xueqian Li, and Xingde Zhang "Photoluminescence of GaAlAs/GaAs quantum wells grown by metalorganic chemical vapor deposition", Proc. SPIE 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II, (14 August 1998); https://doi.org/10.1117/12.318248

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