18 August 1998 Coupled Alx Ga1-xAs-AlAs distributed Bragg reflectors for high-brightness AlGaInP light-emitting diodes
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Abstract
A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes. Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4(lambda) . AlGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition. X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.
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Guohong Wang, Xiaoyu Ma, Yufang Zhang, Huaide Peng, Shutang Wang, Yuzhang Li, Lianhui Chen, "Coupled Alx Ga1-xAs-AlAs distributed Bragg reflectors for high-brightness AlGaInP light-emitting diodes", Proc. SPIE 3560, Display Devices and Systems II, (18 August 1998); doi: 10.1117/12.319694; https://doi.org/10.1117/12.319694
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