18 August 1998 Field-emission characteristics of diamond films deposited by microwave plasma chemical vapor deposition
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Abstract
We have studied the field emission characteristics of diamond films. The diamond films were deposited on mirror- polished silicon substrates by bias enhanced nucleation microwave plasma chemical vapor deposition technique. The nucleation density and surface morphological properties were analyzed by means of SEM. The field emission characteristics of diamond films nucleated on different bias conditions were studied by measuring emission current versus voltage curves (I-V plots). The diamond film has small grain sizes and high nucleation density when bias value is high, it has low turn- on voltage. The diamond film nucleated on higher methane concentration has also low turn-on voltage and its emission current increases rapidly as voltage increases.
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Hong Ji, Hong Ji, Zengsun Jin, Zengsun Jin, Changzhi Gu, Changzhi Gu, Xianyi Lu, Xianyi Lu, Guangtian Zhou, Guangtian Zhou, Guang Yuan, Guang Yuan, Weibiao Wang, Weibiao Wang, } "Field-emission characteristics of diamond films deposited by microwave plasma chemical vapor deposition", Proc. SPIE 3560, Display Devices and Systems II, (18 August 1998); doi: 10.1117/12.319667; https://doi.org/10.1117/12.319667
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