High-brightness AlGaInP orange light-emitting diodes

Yuzhang Li; Guohong Wang; Xiaoyu Ma; Huaide Peng; Shutang Wang; Lianhui Chen

doi:10.1117/12.319695

18 August 1998 High-brightness AlGaInP orange light-emitting diodes

Yuzhang Li, Guohong Wang, Xiaoyu Ma, Huaide Peng, Shutang Wang, Lianhui Chen

Proceedings Volume 3560, Display Devices and Systems II; (1998) https://doi.org/10.1117/12.319695
Event: Photonics China '98, 1998, Beijing, China

Abstract

Orange AlGaInP high brightness light emitting diodes (LEDs) were fabricated by low pressure metalorganic chemical vapor deposition technology. AlGaInP double heterojunction structure was used as active layer. 15 pairs of Al_0.5Ga_0.5As/AlAs distributed Bragg reflector and 7 micrometers Al_0.8Ga_0.2As current spreading layer were employed to reduce the absorption of GaAs substrate and upper anode respectively. At 20 mA the LEDs emitting wavelength was between 600 - 610 nm with 18.3 nm FWHM, 0.45 mW radiation power and 1.7% external quantum efficiency. Brightness of the LED chips and LED lamps with 15 degree(s) viewing angle (2(theta) _1/2) reached 30 mcd and 1000 mcd respectively.

Citation Download Citation

Yuzhang Li, Guohong Wang, Xiaoyu Ma, Huaide Peng, Shutang Wang, and Lianhui Chen "High-brightness AlGaInP orange light-emitting diodes", Proc. SPIE 3560, Display Devices and Systems II, (18 August 1998); https://doi.org/10.1117/12.319695

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