18 August 1998 Polycrystalline silicon porous silicon field emitter
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In this research, we applied the physical and chemical characteristics of porous polysilicon to field emission. Porous polysilicon field emitter was fabricated by anodized, oxide, et al technology. Au film about 10 mm thickness as grid was used in device. Electron's emission property of device was measured in ultrahigh vacuum chamber. Also, the oxide time as effect factor to emission property was studied.
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Weibiao Wang, Weibiao Wang, Changchun Jin, Changchun Jin, Jinxiu Jiang, Jinxiu Jiang, Haifeng Zhao, Haifeng Zhao, Xiwu Fan, Xiwu Fan, "Polycrystalline silicon porous silicon field emitter", Proc. SPIE 3560, Display Devices and Systems II, (18 August 1998); doi: 10.1117/12.319664; https://doi.org/10.1117/12.319664

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