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7 May 1999 Laser ablation of nylon 6.6 under UV irradiation at 193 and 248 nm
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Proceedings Volume 3571, Tenth International School on Quantum Electronics: Laser Physics and Applications; (1999) https://doi.org/10.1117/12.347645
Event: 10th International School on Quantum Electronics: Lasers: Physics and Applications, 1998, Varna, Bulgaria
Abstract
We report on the ablative etching of Nylon 6.6 [-NH-(CH2)6-NH-CO-(CH2)4-CO-] at 193 nm and 248 nm, using a pulse discharged ArF and KrF excimer laser respectively. The etch rate at different fluences was determined for both wavelengths, along with other descriptive parameters such as the threshold fluence. The mass spectroscopic analysis showed that even at low laser energies there was a complete braking of the polymer chain bonds at both wavelengths. Moreover it seems that photofragments with two carbon atoms along with the C equals O radical, have a higher probability to be ablated, while photofragments with three carbon atoms appear only under irradiation at 248 nm. No significant photofragments beyond 50 amu were recorded at both laser wavelengths.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Vassilopoulos, Alkiviadis Constantinos Cefalas, Z. Kollia, Evangelia Sarantopoulou, and Constantine D. Skordoulis "Laser ablation of nylon 6.6 under UV irradiation at 193 and 248 nm", Proc. SPIE 3571, Tenth International School on Quantum Electronics: Laser Physics and Applications, (7 May 1999); https://doi.org/10.1117/12.347645
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