6 July 1999 Bismuth thin films obtained by pulsed laser deposition
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Proceedings Volume 3572, 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications; (1999) https://doi.org/10.1117/12.358343
Event: 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications, 1998, Cartagena de Indias, Colombia
Abstract
In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teresa Flores, Miguel Arronte, Eugenio Rodriguez, Luis Ponce, J. C. Alonso, C. Garcia, M. Fernandez, E. Haro, "Bismuth thin films obtained by pulsed laser deposition", Proc. SPIE 3572, 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications, (6 July 1999); doi: 10.1117/12.358343; https://doi.org/10.1117/12.358343
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