Paper
19 August 1998 All-optical transistor based on polarization plane rotation in a neodymium laser passively Q-switched with a Cr4+:YAG crystal
N. N. Il'ichev, Alexander V. Kir'yanov, Vicente Aboites
Author Affiliations +
Proceedings Volume 3573, OPTIKA '98: 5th Congress on Modern Optics; (1998) https://doi.org/10.1117/12.320969
Event: OPTIKA '98: Fifth Congress on Modern Optics, 1998, Budapest, Hungary
Abstract
A device is proposed which is based on the phenomenon of dependence of polarization state of a neodymium laser ((lambda) equals 1.06 micrometers ) passively Q-switched with a Cr4+:YAG crystal upon relative orientations of the switch and an intracavity partial polarizer. It is shown that such a device operates as an all-optical transistor. One of the main parameters (polarization) of the powerful neodymium laser can be controlled by the relatively weak signal delivered from a cw laser or laser diode, wavelength of which falls into the Cr4+:YAG crystal resonant absorption band (0.8 - 1.2 micrometers ).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. N. Il'ichev, Alexander V. Kir'yanov, and Vicente Aboites "All-optical transistor based on polarization plane rotation in a neodymium laser passively Q-switched with a Cr4+:YAG crystal", Proc. SPIE 3573, OPTIKA '98: 5th Congress on Modern Optics, (19 August 1998); https://doi.org/10.1117/12.320969
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polarization

Crystals

Neodymium lasers

Picosecond phenomena

Laser crystals

Transistors

Semiconductor lasers

Back to Top