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19 August 1998 Smooth vanadium-nitride layers created on silicon substrates by pulse laser deposition method
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Proceedings Volume 3573, OPTIKA '98: 5th Congress on Modern Optics; (1998) https://doi.org/10.1117/12.320986
Event: OPTIKA '98: Fifth Congress on Modern Optics, 1998, Budapest, Hungary
Abstract
Pulsed Laser Deposition (PLD) of vanadium-nitride (V2N, V10N7) films on Si substrates have been carried out under influence of series of UV (excimer) laser pulses ((lambda) equals 308 nm, (tau) FWHM equals 25 ns) in NH3 atmosphere of a few mbars. In the reaction cell the Si target has been placed to be parallel to V sheet at angle of 45 degree(s) to the incident laser beam, and the plasma plume induced by laser pulse reached the target close perpendicularly. The number of shots at fluxes of 30 J/cm2 were varied between 100 and 5000. Rutherford Back- Scattering studies revealed that under influence of laser pulses at Si layer V2N layers of 100 nm thickness were formed, while the composition of the layer closer atmosphere was V10N7 of 50 nm thickness (in average). In some cases we observed layers of VNCO and V10N7C5. Atomic Force Microscopy measurements revealed a formation of quite smooth surfaces with roughness of less than 10 nm. A characteristic wave-like structure with period of 3 - 5 nm was able to be observed in some cases. XPS examinations showed the existence of well defined peaks of V(2p) lines at 516 eV and 513 eV. Also we observed lines of N(1s) at 397 eV, O(1s) at 529 eV and C(1s) at 284 eV. From these investigations it might be concluded that PLD technique allows growing smooth VN layers on Si with a little, but measurable contamination of carbon and oxygen.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laszlo Nanai, Robert Vajtai, J. Kiss, Armando Luches, and Ion N. Mihailescu "Smooth vanadium-nitride layers created on silicon substrates by pulse laser deposition method", Proc. SPIE 3573, OPTIKA '98: 5th Congress on Modern Optics, (19 August 1998); https://doi.org/10.1117/12.320986
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