7 April 1999 Observation of photoexcited emission clusters in the bulk of KDP and laser conditioning under 355-nm irradiation
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Abstract
Defect clusters in the bulk of large KDP crystals are revealed using a microscopic fluorescence imaging system and CW laser illumination. Exposure of the crystal to high power 355-nm, 3-ns laser irradiation leads to a significant reduction of the number of observed optically active centers. The initially observed defect cluster concentration is approximately 104-106 per mm3 depending on the crystal growth method and sector of the crystal. The number of defect clusters can be reduced by a factor of 102 or more under exposure to 355-nm laser irradiation while their average intensities also decreases. Spectroscopic measurements provide information on the electronic structure of the defects.
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Stavros G. Demos, Stavros G. Demos, Michael C. Staggs, Michael C. Staggs, Ming Yan, Ming Yan, Harry B. Radousky, Harry B. Radousky, James J. De Yoreo, James J. De Yoreo, } "Observation of photoexcited emission clusters in the bulk of KDP and laser conditioning under 355-nm irradiation", Proc. SPIE 3578, Laser-Induced Damage in Optical Materials: 1998, (7 April 1999); doi: 10.1117/12.344402; https://doi.org/10.1117/12.344402
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