7 April 1999 Subpicosecond studies of carrier dynamics in laser-induced breakdown
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In this paper, we present measurements of the excited carrier density in various wide band gap oxides irradiated by short laser pulses, at intensities below and above breakdown threshold. This is achieved with the help of time resolved interferometry in the frequency domain, a technique which was successfully used to study the dynamics of photoexcited carriers in insulators. The result obtained in different experimental conditions, distance from the surface, pump intensities and duration, during or after the pump pulse, are discussed and compared to the models recently developed to explain optical breakdown.
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Fabien Quere, Stephane Guizard, Philippe Martin, Guillaume Petite, Olivier Gobert, Pierre Meynadier, and Michel Perdrix "Subpicosecond studies of carrier dynamics in laser-induced breakdown", Proc. SPIE 3578, Laser-Induced Damage in Optical Materials: 1998, (7 April 1999); doi: 10.1117/12.344445; https://doi.org/10.1117/12.344445

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