6 November 1998 Optoelectronic properties and characteristics of doping superlattices
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Proceedings Volume 3580, Photoconversion: Science and Technologies; (1998) https://doi.org/10.1117/12.330449
Event: Photoconversion: Science and Technologies, 1997, Warsaw, Poland
Abstract
Optical and electric properties of doping superlattices, or n-i-p-i crystals, can be varied in a wide range under excitation and through the choice of the thicknesses and doping of the crystal layers. Some basic results concerned the transformation of the electron energy spectrum of doping superlattices are summarized. Parameters and characteristics of doping superlattices related to optoelectronics devices, such as photodetectors, laser diodes, and optical modulators, are presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valerii K. Kononenko, Valerii K. Kononenko, Ivan S. Manak, Ivan S. Manak, Dmitrii V. Ushakov, Dmitrii V. Ushakov, } "Optoelectronic properties and characteristics of doping superlattices", Proc. SPIE 3580, Photoconversion: Science and Technologies, (6 November 1998); doi: 10.1117/12.330449; https://doi.org/10.1117/12.330449
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