11 November 1998 Integrated acousto-optics in compound semiconductor waveguide structures
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Proceedings Volume 3581, Acousto-Optics and Applications III; (1998); doi: 10.1117/12.330472
Event: Acousto-Optics and Applications III, 1998, Gdansk-Jurata, Poland
Abstract
Compound semiconductor waveguide substrates have been recognized for sometime for their potential for realization of monolithic integrated acoustooptics (AO) devices and circuits. Recent theoretical and experimental studies on AO Bragg interactions in GaAs-based waveguide substrates and the most recent studies in InP-based waveguide substrates have made advances toward this potential. It is clear that many of the science and technology that are being developed in conjunction with the InP-based photonics integrated circuits may be employed for realization of monolithic integrated AO devices and circuits. Such future integrated AO devices and circuits should facilitate utilization of photons, phonons and electrons in a common material substrate for a variety of applications in information processing and communications, and sensing that are not possible with utilization of two particles alone.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chen S. Tsai, "Integrated acousto-optics in compound semiconductor waveguide structures", Proc. SPIE 3581, Acousto-Optics and Applications III, (11 November 1998); doi: 10.1117/12.330472; https://doi.org/10.1117/12.330472
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KEYWORDS
Acousto-optics

Waveguides

Bragg cells

Compound semiconductors

Diffraction

Electrons

Photonic integrated circuits

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