23 June 1999 Ultrashort transient pulse propagation effect in semiconductor waveguides under a nonlinear dispersion regime
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Abstract
Using semiclassical time dependent perturbation treatment, the coherence radiation-semiconductor interaction under ultrashort pulsed near band-gap resonant excitation regime has been analytically investigated in a narrow direct-gap semiconductor waveguide structure. The role of excitonic effect is incorporated to study transient pulse propagation effects in GAs/AlGaAs waveguide duly irradiated by a 100 fs Ti:Sapphire laser. Nonlinear Schroedinger equation is employed to examine the role of group velocity dispersion and nonlinear optical effect on the transmission characteristics of the pulse at various excitation intensities and waveguide lengths. The results suggest the occurrence of pulse break-up and pulse narrowing during propagation of the pulse through the GaAs/AlGaAs waveguide.
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Pranay K. Sen, Abhay Kumar, Pratima Sen, "Ultrashort transient pulse propagation effect in semiconductor waveguides under a nonlinear dispersion regime", Proc. SPIE 3609, Optical Pulse and Beam Propagation, (23 June 1999); doi: 10.1117/12.351069; https://doi.org/10.1117/12.351069
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