29 April 1999 Characterization of photoconducting materials using variable-length picosecond terahertz pulses
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A source of high-intensity, ultra-short terahertz pulses has been developed. The operation and performance of a terahertz pulse-slicing system for use with the UCSB free-electron lasers are discussed. Short pulses are sliced from the microsecond long output of the free-electron laser using laser-activated semiconductor switches; the pulse length may be freely varied from a few picoseconds up to four nanoseconds. The temporal response of a heavily compensated gallium-doped germanium photoconductor has been investigated. At low excitation intensity, a recombination time of 2 +/- 0.1 ns is found. At higher THz pulse powers non-exponential relaxation is observed; the data is well modeled using a rate equation approach and including impact- ionization impact-ionization effects due to the terahertz- heated free holes.
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Bryan E. Cole, Bryan E. Cole, Frank A. Hegmann, Frank A. Hegmann, Jon B. Williams, Jon B. Williams, Mark S. Sherwin, Mark S. Sherwin, Jeffrey W. Beeman, Jeffrey W. Beeman, Eugene E. Haller, Eugene E. Haller, } "Characterization of photoconducting materials using variable-length picosecond terahertz pulses", Proc. SPIE 3617, Terahertz Spectroscopy and Applications, (29 April 1999); doi: 10.1117/12.347121; https://doi.org/10.1117/12.347121

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