29 April 1999 Coherent terahertz mixing spectroscopy of asymmetric quantum well intersubband transitions
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Since terahertz electric fields can couple strongly to quantum well intersubband transitions we expect interband optical properties of a semiconductor heterostructure to change resonantly under a THz driving field. By driving the excitonic intersubband resonance of an asymmetric quantum well with intense THz electric fields from a free electron laser, we modulate the transmission of a near-IR (NIR) laser beam at terahertz frequencies. This process manifests itself as the emission of optical sidebands on the NIR probe. In previous THz electro-optical studies in semiconductors, only even sidebands of frequency (omega) sideband equals (omega) NIR + 2n(omega) THz had been observed. BY breaking inversion symmetry we are able to generate a comb of even and odd sidebands. The sidebands obey both THz and near-IR polarization selection rules and are enhanced when the NIR energy is resonant with a peak in the excitonic density of states. The ability to generate THz optical sidebands of all orders is important for the future application of THz EO effects in nonlinear spectroscopy and in ultrafast optical phase and amplitude modulation.
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Mark Y. Su, Mark Y. Su, Christopher C. Phillips, Christopher C. Phillips, Christoph Kadow, Christoph Kadow, Jack Ko, Jack Ko, Larry A. Coldren, Larry A. Coldren, Arthur C. Gossard, Arthur C. Gossard, Mark S. Sherwin, Mark S. Sherwin, } "Coherent terahertz mixing spectroscopy of asymmetric quantum well intersubband transitions", Proc. SPIE 3617, Terahertz Spectroscopy and Applications, (29 April 1999); doi: 10.1117/12.347114; https://doi.org/10.1117/12.347114

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