Linewidth of THz intersubband transitions in GaAs/AlGaAs quantum wells

Jon B. Williams; Mark S. Sherwin; Kevin D. Maranowski; Christoph Kadow; Arthur C. Gossard

doi:10.1117/12.347117

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29 April 1999 Linewidth of THz intersubband transitions in GaAs/AlGaAs quantum wells

Jon B. Williams, Mark S. Sherwin, Kevin D. Maranowski, Christoph Kadow, Arthur C. Gossard

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Proceedings Volume 3617, Terahertz Spectroscopy and Applications; (1999) https://doi.org/10.1117/12.347117
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Terahertz-frequency intersubband transitions in semiconductor quantum wells are of interest due to the potential for making devices which operate at THz frequencies, and the importance of many body interactions on the intersubband dynamics. We present measurements of the linear absorption linewidth of ISB transitions in a single 40 nm delta-doped GaAs/Al_0.3Ga_0.7As square quantum well, with a transition energy of order 10 meV. Separate back- and front-gates allow independent control of charge density and DC bias. The absorption linewidth is proportional to the dephasing rate of the collective excitation. In order to examine the dephasing dynamics at THz frequencies, we have begun a detailed measurement of the ISB absorption versus charge density.

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Jon B. Williams, Mark S. Sherwin, Kevin D. Maranowski, Christoph Kadow, and Arthur C. Gossard "Linewidth of THz intersubband transitions in GaAs/AlGaAs quantum wells", Proc. SPIE 3617, Terahertz Spectroscopy and Applications, (29 April 1999); https://doi.org/10.1117/12.347117

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