Advances in pulsed laser deposition growth of nitride thin films

Felix E. Fernandez; Manuel Pumarol; Antonio Martinez; Weiyi Jia; Yanyung Wang; Edgardo Rodriguez; Houssam A. Mourad

doi:10.1117/12.352706

15 July 1999 Advances in pulsed laser deposition growth of nitride thin films

Felix E. Fernandez, Manuel Pumarol, Antonio Martinez, Weiyi Jia, Yanyung Wang, Edgardo Rodriguez, Houssam A. Mourad

Proceedings Volume 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV; (1999) https://doi.org/10.1117/12.352706
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Pulsed laser deposition of nitride semiconductor films offers an alternative to more usual techniques, such as MOCVD and MBE. PLD can produce good quality films at reduced growth temperatures. Rapid progress has been achieved in the laser few years, including demonstrations of epitaxial growth of GaN directly on sapphire. Work on PLD of direct- transition III- nitrides is briefly reviewed and our recent results for these materials are presented. Growth of these nitrides requires provision of nitrogen in a reactive form, which is usually supplied by NH₃ gas flow. With the approach described here, reactive nitrogen is provided in an atomic beam, which has the advantage of reducing dependence on substrate temperature to surmount the kinetic energy barrier for formation, while eliminating a source of hydrogen during growth. Films grown from ceramic GaN targets are compared with those grown from liquid Ga. The latter method can offer better control of unintentional doping. InN films were also grown directly from In metal targets, with very good results in term so stoichiometry and crystalline quality. AlN films were grown from ceramic AlN targets, with excellent texture at reduced temperatures. Results are presented for crystal structure, composition and surface morphology. Optical properties were studied by transmission and luminescence spectroscopy.

Citation Download Citation

Felix E. Fernandez, Manuel Pumarol, Antonio Martinez, Weiyi Jia, Yanyung Wang, Edgardo Rodriguez, and Houssam A. Mourad "Advances in pulsed laser deposition growth of nitride thin films", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); https://doi.org/10.1117/12.352706

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KEYWORDS

Gallium nitride

Indium nitride

Luminescence

Sapphire

Ceramics

Nitrogen

Gallium

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