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15 July 1999 Electrical and optical properties of ITO films deposited by excimer-laser-assisted EB method
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In-situ excimer laser irradiation on growing films is expected to progress the surface reaction i.e. oxidation and surface migration of adatoms. This method therefore will be adequate for the low temperature formation of oxide semiconductor films showing a wide band energy gap. We studied the effect of in-situ excimer laser irradiation on the electron beam deposited Indium-Tin-Oxide (ITO) films and evaluated the electrical and optical properties. The ITO films deposited without laser irradiation at room temperature were opaque and had an amorphous structure, and its resistivity was higher than 0.04 (Omega) cm. On the other hand, the ITO films deposited with in-situ laser irradiation at room temperature showed good transparency and electric properties. The low resistivity, smaller than 9 X 10-4 (Omega) cm, and high transparency, more than 90 percent, were achieved simultaneously at room temperature. The films crystallized with in-situ laser irradiation had a cubic crystalline structure. The Hall mobility and carrier density of the ITO film were 12 cm2/Vs and 5.5 X 1022 cm-3, respectively. These result suggested that the in-situ excimer laser irradiation progressed the surface oxidation and eliminated the unstable adatoms on the surface of growing ITO films.
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Tetsuo Yano, Masafumi Yoneda, Toshihiko Ooie, Munehide Katsumura, Yoshifumi Suzaki, and Tomokazu Shikama "Electrical and optical properties of ITO films deposited by excimer-laser-assisted EB method", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999);

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