15 July 1999 Interferometric lithography for nanoscale fabrication
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Abstract
Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with feature resolution to approximately 50 nm. Combining IL with anisotropic etching and with 3D oxidation techniques provides a suite of techniques that accesses a broad range of Si nanostructures over large areas and wit good uniformity. Optical characterization includes measurements of reflectivity for a wide range of 1D grating profiles, and Raman scattering characterization of Si nanostructures. Three regimes are found for the Raman scattering: bulk, resonant enhanced and asymmetry and splitting.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Saleem H. Zaidi and Steven R. J. Brueck "Interferometric lithography for nanoscale fabrication", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352681; https://doi.org/10.1117/12.352681
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