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15 July 1999 Laser direct dry etching of GaAs/AIGaAs multilayer
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Abstract
It has been studied the direct dry etching of GaAs/AlGaAs multilayer using argon ion laser. To analyze etching characteristics at an interface between GaAs and AlGaAs, local temperature profiles on the surface by a laser irradiation were calculated through 3D heat transfer equation. Etching profiles obtained in this study were somewhat different from that of GaAs bulk obtained in our previous study. Etch width of GaAs/AlGaAs interface was larger than that of the AlGaAs/GaAs. Now until, accurate mechanism of the dry etching for multilayer has not ben reported. But, it is assumed that the mechanism has to do with thermal characteristics such as thermal conductivity, absorption coefficient, and the mechanism has to do with thermal characteristics such as thermal conductivity, absorption coefficient, and melting point of materials. The phenomenon result from the fact that laser direct dry etching is dominantly thermal reaction. The maximum etching rate was 32.5 micrometers /sec and the aspect ratio of etched groove on multilayer was 0.5. This special etching profiles obtained in this study are expected to apply for a waveguide of optoelectronics and cantilever of MEMS.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
SeKi Park, Cheon Lee, and Eun Kyu Kim "Laser direct dry etching of GaAs/AIGaAs multilayer", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); https://doi.org/10.1117/12.352716
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