15 July 1999 Lattice strain in excimer-laser-crystallized poly-Si thin films
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Abstract
The lattice strain in excimer laser crystallized polycrystalline Si thin films reflects the grain growth induced by the laser irradiation. In this report, the measurement of the lattice strain is made by using the energy-dispersive grazing-incidence x-ray diffraction with synchrotron radiation. The excimer laser crystallized poly- Si thin films show tensile lattice strain in the directions parallel to the substrate surface. The strain increases from 2.2 X 10-3 to 5.0 X 10-3 when the grain size increase from 40 to 200 nm. The strain is anisotropic between the strain and the strain in the layer near the substrate interface when the grain size is small. Carrier mobility in a thin film transistor tends to increase when the strain increases and the anisotropy decreases.
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Hiroshi Okumura, Hiroshi Okumura, Akio Tanikawa, Akio Tanikawa, Kenji Sera, Kenji Sera, Fujio Okumura, Fujio Okumura, } "Lattice strain in excimer-laser-crystallized poly-Si thin films", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352694; https://doi.org/10.1117/12.352694
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