15 July 1999 Maskless laser-induced deposition of Cu film patterns from copper formate
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Abstract
Laser direct writing using thin solid films of metallo- organic precursors offers some unique advantages in terms of materials design, process control, and safety over gas phase or solution processor. Micro patterned copper films were obtained by laser-induced deposition using Cu(HCOO)2 4H2O films as a precursor. Then the new applicabilities for interconnection of integrated circuits were preliminary studied by the estimation of physical and electrical properties of copper films after annealing. The growth kinetics of these Cu films was investigated as a function of the laser power and the scan speed which were varied in the range of 70 to 600 mW and 0.1 to 20 mm/s, respectively. The high-purity of the deposit was also confirmed by Auger electron spectroscopy analysis. The resistivity of the patterned copper films was a factor of about 20 higher than that of bulk value however, the resistivity decreased due to changes in morphology and porosity of the deposit and was about 10 (mu) (Omega) cm after annealing at 300 degrees C for 5 minutes.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaehwan Kim, Cheon Lee, "Maskless laser-induced deposition of Cu film patterns from copper formate", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352717; https://doi.org/10.1117/12.352717
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