Properties of boron-carbon-nitrogen ternary thin films synthesized by pulsed laser deposition

ZhongMin Ren; Yongfeng Lu; ZhiHong Mai; B. A. Cheong; S. K. Chow; Jian Ping Wang; Tow Chong Chong

doi:10.1117/12.352724

15 July 1999 Properties of boron-carbon-nitrogen ternary thin films synthesized by pulsed laser deposition

ZhongMin Ren, Yongfeng Lu, ZhiHong Mai, B. A. Cheong, S. K. Chow, Jian Ping Wang, Tow Chong Chong

Proceedings Volume 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV; (1999) https://doi.org/10.1117/12.352724
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Boron-Carbon-Nitride B_xC_yN_z thin films were deposited by excimer laser ablation of boron carbide under nitrogen ion-beam bombardment. Thin films were deposited in the intersection of the ablated B-C plasma and nitrogen ion beam on the silicon substrates. The laser pulse energy was selected in the range of 30-100 mJ with pulse duration of 23 ns. The electronic and compositional properties of the deposited thin films were analyzed by x-ray photoelectron spectroscope, Raman and IR spectroscope, scanning tunneling microscopy and ellipsometry measurements. The influence of the ion beam bombardment on the optical, electrical and electronic properties of the deposited thin films was studied.

Citation Download Citation

ZhongMin Ren, Yongfeng Lu, ZhiHong Mai, B. A. Cheong, S. K. Chow, Jian Ping Wang, and Tow Chong Chong "Properties of boron-carbon-nitrogen ternary thin films synthesized by pulsed laser deposition", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); https://doi.org/10.1117/12.352724

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