15 July 1999 Properties of boron-carbon-nitrogen ternary thin films synthesized by pulsed laser deposition
Author Affiliations +
Abstract
Boron-Carbon-Nitride BxCyNz thin films were deposited by excimer laser ablation of boron carbide under nitrogen ion-beam bombardment. Thin films were deposited in the intersection of the ablated B-C plasma and nitrogen ion beam on the silicon substrates. The laser pulse energy was selected in the range of 30-100 mJ with pulse duration of 23 ns. The electronic and compositional properties of the deposited thin films were analyzed by x-ray photoelectron spectroscope, Raman and IR spectroscope, scanning tunneling microscopy and ellipsometry measurements. The influence of the ion beam bombardment on the optical, electrical and electronic properties of the deposited thin films was studied.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
ZhongMin Ren, ZhongMin Ren, Yongfeng Lu, Yongfeng Lu, ZhiHong Mai, ZhiHong Mai, B. A. Cheong, B. A. Cheong, S. K. Chow, S. K. Chow, Jian Ping Wang, Jian Ping Wang, Tow Chong Chong, Tow Chong Chong, } "Properties of boron-carbon-nitrogen ternary thin films synthesized by pulsed laser deposition", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352724; https://doi.org/10.1117/12.352724
PROCEEDINGS
9 PAGES


SHARE
RELATED CONTENT


Back to Top