15 July 1999 Transient temperature measurement of amorphous silicon thin films during excimer laser annealing
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Abstract
The excimer laser annealing of amorphous silicon thin films has been investigated via optical diagnostics. Amorphous silicon films of 50 nm thickness are used in laser annealing. To obtain the transient temperature variation in the laser annealing process, the thermal emission and near- IR optical properties are measured. The front transmissivity and reflectivity are measured to obtain the emissivity at the 1.52 micrometers wavelength of the probe IRHeNe laser. Significant undercooling of the liquid silicon is observed during the cooling stage. The emissivity is almost constants during the melting period, but increases during the melting and solidification transformations.
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Seung-Jae Moon, Seung-Jae Moon, Ming-Hong Lee, Ming-Hong Lee, Mutsuko Hatano, Mutsuko Hatano, Kenkichi Suzuki, Kenkichi Suzuki, Constantine P. Grigoropoulos, Constantine P. Grigoropoulos, } "Transient temperature measurement of amorphous silicon thin films during excimer laser annealing", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352692; https://doi.org/10.1117/12.352692
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