29 March 1999 Modeled and measured scatter from vias
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Abstract
This paper briefly reviews the use of a verified model to investigate light scatter metrology to detect the presence of defects in semiconductor circuit vias. Three types of defects are examined. Although defects can be detected, there are practical problems associated with separating defects from acceptable changes in dielectric film thickness.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John C. Stover, John C. Stover, Craig A. Scheer, Craig A. Scheer, Vladimir I. Ivakhnenko, Vladimir I. Ivakhnenko, Yuri A. Eremin, Yuri A. Eremin, Natalia Grishina, Natalia Grishina, } "Modeled and measured scatter from vias", Proc. SPIE 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays, (29 March 1999); doi: 10.1117/12.343713; https://doi.org/10.1117/12.343713
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