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29 March 1999Modeled and measured scatter from vias
This paper briefly reviews the use of a verified model to investigate light scatter metrology to detect the presence of defects in semiconductor circuit vias. Three types of defects are examined. Although defects can be detected, there are practical problems associated with separating defects from acceptable changes in dielectric film thickness.
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John C. Stover, Craig A. Scheer, Vladimir I. Ivakhnenko, Yuri A. Eremin, Natalia Grishina, "Modeled and measured scatter from vias," Proc. SPIE 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays, (29 March 1999); https://doi.org/10.1117/12.343713