Modeled and measured scatter from vias

John C. Stover; Craig A. Scheer; Vladimir I. Ivakhnenko; Yuri A. Eremin; Natalia Grishina

doi:10.1117/12.343713

Translator Disclaimer

29 March 1999 Modeled and measured scatter from vias

John C. Stover, Craig A. Scheer, Vladimir I. Ivakhnenko, Yuri A. Eremin, Natalia Grishina

Author Affiliations +

Proceedings Volume 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays; (1999) https://doi.org/10.1117/12.343713
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

This paper briefly reviews the use of a verified model to investigate light scatter metrology to detect the presence of defects in semiconductor circuit vias. Three types of defects are examined. Although defects can be detected, there are practical problems associated with separating defects from acceptable changes in dielectric film thickness.

Citation Download Citation

John C. Stover, Craig A. Scheer, Vladimir I. Ivakhnenko, Yuri A. Eremin, and Natalia Grishina "Modeled and measured scatter from vias", Proc. SPIE 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays, (29 March 1999); https://doi.org/10.1117/12.343713

ACCESS THE FULL ARTICLE