14 April 1999 Engineering high-quality InxGa1-xP graded composition buffers on GaP for transparent substrate light-emitting diodes
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Abstract
We present the development of high-quality InxGa1-xP graded buffers on GaP substrates (InxGa1-xP/GaP) for use in epitaxial transparent-substrate light-emitting diodes. The evolution of microstructure and dislocation dynamics of these materials has been explored as a function of growth conditions. The primarily limiting factor in obtaining high-quality InxGa1-xP/GaP is a new defect microstructure that we call branch defects. Branch defects pin dislocations and result in dislocation pileups that cause an escalation in threading dislocation density with continued grading.
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Andrew Y. Kim, Andrew Y. Kim, Eugene A. Fitzgerald, Eugene A. Fitzgerald, } "Engineering high-quality InxGa1-xP graded composition buffers on GaP for transparent substrate light-emitting diodes", Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); doi: 10.1117/12.344465; https://doi.org/10.1117/12.344465
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