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14 April 1999 Growth of InGaAlP HB-LEDs in a large-scale-production reactor
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The theory, structure, and current manufacturing technologies for InGaAlP high brightness light emitting diodes (HB-LED) emitting in the range of 650 to 585 nm are described in this paper. A state-of-the-art HB-LED MOCVD reactor designed for high volume manufacturing (42 - 2' or 16 - 3' wafers) is demonstrated. Data for thickness and compositional uniformity and reproducibility are presented showing the material quality and reactor stability that can currently be achieved. In addition, device data for InGaAlP HB-LEDs is reported, including brightness, forward voltage, and emission wavelength with excellent intra and inter wafer uniformity and run-to-run reproducibility.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sherman Li, D. A. Collins, S. Vatanapradit, M. Ferreira, Peter A. Zawadzki, Richard A. Stall, Ivan Eliashevich, and J. E. Nering "Growth of InGaAlP HB-LEDs in a large-scale-production reactor", Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999);

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