High-efficiency top-emitting microcavity light-emitting diodes

P. Royo; Jean-Francois Carlin; J. Spicher; Ross P. Stanley; Romuald Houdre; Veronique Bardinal; Ursula Oesterle; Marc Ilegems

doi:10.1117/12.344474

14 April 1999 High-efficiency top-emitting microcavity light-emitting diodes

P. Royo, Jean-Francois Carlin, J. Spicher, Ross P. Stanley, Romuald Houdre, Veronique Bardinal, Ursula Oesterle, Marc Ilegems

Author Affiliations +

Proceedings Volume 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III; (1999) https://doi.org/10.1117/12.344474
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Microcavity light emitting diodes (MCLEDs) present several interesting features compared to conventional LEDs such as narrow linewidth, improved directionality and high efficiency. We report here on MCLEDs with a top emitting geometry. The MCLED layers were grown using molecular beam epitaxy on GaAs substrates. They consist of a 3-period Be- doped distributed Bragg reflector (DBR) centered at 950 nm wavelength, a cavity containing three InGaAs quantum wells and a 15-periods Si-doped DBR. Different values for the wavelength detuning between spontaneous emission line and Fabry-Perot cavity mode were explored, between -40 nm and +10 nm. Devices sizes ranged from 420 X 420 micrometers ² to 22 X 22 micrometers ². As expected from simulations, the higher efficiencies are obtained when the detuning is in the -20 to 0 nm range. The devices exhibit then up to 10% external quantum efficiency, measured for a 62 degree(s) collection half-angle. After correction for the surface shadowing due to the grid p-contact, the efficiency increases to 14% and is practically independent of device size.

Citation Download Citation

P. Royo, Jean-Francois Carlin, J. Spicher, Ross P. Stanley, Romuald Houdre, Veronique Bardinal, Ursula Oesterle, and Marc Ilegems "High-efficiency top-emitting microcavity light-emitting diodes", Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); https://doi.org/10.1117/12.344474

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