14 April 1999 High-efficiency top-emitting microcavity light-emitting diodes
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Abstract
Microcavity light emitting diodes (MCLEDs) present several interesting features compared to conventional LEDs such as narrow linewidth, improved directionality and high efficiency. We report here on MCLEDs with a top emitting geometry. The MCLED layers were grown using molecular beam epitaxy on GaAs substrates. They consist of a 3-period Be- doped distributed Bragg reflector (DBR) centered at 950 nm wavelength, a cavity containing three InGaAs quantum wells and a 15-periods Si-doped DBR. Different values for the wavelength detuning between spontaneous emission line and Fabry-Perot cavity mode were explored, between -40 nm and +10 nm. Devices sizes ranged from 420 X 420 micrometers 2 to 22 X 22 micrometers 2. As expected from simulations, the higher efficiencies are obtained when the detuning is in the -20 to 0 nm range. The devices exhibit then up to 10% external quantum efficiency, measured for a 62 degree(s) collection half-angle. After correction for the surface shadowing due to the grid p-contact, the efficiency increases to 14% and is practically independent of device size.
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P. Royo, Jean-Francois Carlin, J. Spicher, Ross P. Stanley, Romuald Houdre, Veronique Bardinal, Ursula Oesterle, Marc Ilegems, "High-efficiency top-emitting microcavity light-emitting diodes", Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); doi: 10.1117/12.344474; https://doi.org/10.1117/12.344474
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