Paper
14 April 1999 Optical studies of InAs/In(As,Sb) single quantum well (SQW) and strained-layer superlattice (SLS) LEDs for the mid-infrared (MIR) region
Harvey R. Hardaway, Joerg Heber, Peter Moeck, Mark J. Pullin, Tony Stradling, Patrick J.P. Tang, Christopher C. Phillips
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Abstract
We report on electroluminescence and photoluminescence studies of arsenic rich InAs1-xSbx heterostructure LED's for the MIR region. Single-quantum- well LED's have demonstrated 300 K of approximately 24 (mu) W and approximately 50 (mu) W and approximately 8 micrometers , respectively, with corresponding internal quantum efficiencies of 0.8% and 1.6%. We also demonstrate 4.2 micrometers , 300 K emission from strained-layer superlattice (SLS) LED's with AlSb electron confining barriers with output powers > 0.1 mW. In reverse bias, these SLS devices exhibit negative luminescence efficiencies of approximately 14% at 310 K.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harvey R. Hardaway, Joerg Heber, Peter Moeck, Mark J. Pullin, Tony Stradling, Patrick J.P. Tang, and Christopher C. Phillips "Optical studies of InAs/In(As,Sb) single quantum well (SQW) and strained-layer superlattice (SLS) LEDs for the mid-infrared (MIR) region", Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); https://doi.org/10.1117/12.344470
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Cited by 2 scholarly publications.
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KEYWORDS
Light emitting diodes

Laser sintering

Luminescence

Quantum wells

Indium arsenide

Superlattices

Antimony

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