1 April 1999 1.55-um Er-doped GaN LED
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Abstract
Erbium (Er) doped semiconductors are of interest for light- emitting device applications operating at around 1.55 micrometers and for the potential integration with other semiconductor devices. However, the optical emission of Er3+ ions in semiconductors has not been as efficient as in dielectric materials, particularly at room temperature. This may be because ionic bonds, which are characteristic of dielectrics, are better suited for forming the required Er3+ energy levels than are covalent bonds, which are present in most III-V semiconductors. In this paper, we report 1.55 micrometers emission from an Er-doped GaN LED. We also discuss effect of the measurement temperature on the emission spectrum as well as the effect of sample annealing on the emission spectrum.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongen Shen, Hongen Shen, Jagadeesh Pamulapati, Jagadeesh Pamulapati, Monica Alba Taysing-Lara, Monica Alba Taysing-Lara, M. C. Wood, M. C. Wood, Richard T. Lareau, Richard T. Lareau, Matthew H. Ervin, Matthew H. Ervin, John Devin Mackenzie, John Devin Mackenzie, Fan Ren, Fan Ren, Corinne R. Abernathy, Corinne R. Abernathy, John M. Zavada, John M. Zavada, } "1.55-um Er-doped GaN LED", Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); doi: 10.1117/12.344498; https://doi.org/10.1117/12.344498
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