1 April 1999 Luminescent properties of Er-doped BaTiO3 thin films for optical waveguides
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Abstract
Erbium doped BaTiO3 thin films for optical waveguide applications were investigated. Characteristic 4f emission at 1560 nm is observed for Er concentrations ranging from 1018 to 1020 cm-3. Factors which determined the luminescence efficiency were investigated and a model for efficiency was developed. The luminescence intensity depended predominantly upon two factors: the concentration of radiative Er centers and the de-excitation efficiency of the excited 4f electron state. At a growth temperature of 725 degree(s)C, the concentration of radiative Er ions was independent of Er dopant concentration. Annealing the thin films in an oxidizing ambient resulted in increased luminescence efficiency whereas annealing under reducing conditions quenched the luminescence.
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Gregory M. Ford, Gregory M. Ford, Andrew Teren, Andrew Teren, Bruce W. Wessels, Bruce W. Wessels, } "Luminescent properties of Er-doped BaTiO3 thin films for optical waveguides", Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); doi: 10.1117/12.344497; https://doi.org/10.1117/12.344497
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