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1 April 1999 Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
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Abstract
An investigation on optical amplification in Ti waveguides in LiNbO3 doped with Er ions by thermal diffusion of thin metallic stripes is presented. The possibility of fabricating efficient optical amplifiers in LiNbO3 substrates realized by localization of the dopant on surface areas of the crystals was theoretically evaluated and the feasibility of fabricating efficient amplifiers in such doped structures was experimentally verified. It was concluded that the localized doping technique allows optimization of amplifier performance through adjustment of the active region geometry to the mode intensity profile.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jose M. M. M. de Almeida, Antonio M. P. P. Leite, and Jaymin Amin "Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides", Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); https://doi.org/10.1117/12.344505
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