Effect of erbium concentration on upconversion luminescence of Er:Yb:phosphate glass excited by InGaAs laser diode

Feng Song; Michael J. Myers; Shibin Jiang; Yan Feng; X. B. Chen; Guangyin Zhang

doi:10.1117/12.344493

1 April 1999 Effect of erbium concentration on upconversion luminescence of Er:Yb:phosphate glass excited by InGaAs laser diode

Feng Song, Michael J. Myers, Shibin Jiang, Yan Feng, X. B. Chen, Guangyin Zhang

Author Affiliations +

Proceedings Volume 3622, Rare-Earth-Doped Materials and Devices III; (1999) https://doi.org/10.1117/12.344493
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

The effect of concentration of Er³⁺ on the upconversion luminescence of the Er:Yb:glass excited by InGaAs laser diode is reported. With different concentration of Er³⁺, the upconversion luminescence intensity, the intensity ration of green and red lights, and the near infrared lights are different. The detailed mechanisms of upconversion luminescence are analyzed.

Citation Download Citation

Feng Song, Michael J. Myers, Shibin Jiang, Yan Feng, X. B. Chen, and Guangyin Zhang "Effect of erbium concentration on upconversion luminescence of Er:Yb:phosphate glass excited by InGaAs laser diode", Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); https://doi.org/10.1117/12.344493

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