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24 May 1999 Ballistic electron transport in InP observed by subpicosend time-resolved Raman spectroscopy
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Electron ballistic transport and in a InP-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T equals 300 K. The time-evolution of electron distribution, electron drift velocity has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n equalsV 5 X 1016 cm-3, electrons travel quasi- ballistically--electron drift velocity increases linearly with time, during the first 150 fs. After 150 fs it increases sublinearly until reaching the peak value at about 300 fs. The electron drift velocity then decreases to its steady-state value.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kong-Thon F. Tsen, David K. Ferry, Jyh-Shyang Wang, Chao-Hsiung Huang, and Hao-Hsiung Lin "Ballistic electron transport in InP observed by subpicosend time-resolved Raman spectroscopy", Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999);

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