24 May 1999 Experimental observation of multiple excitonic optical Rabi oscillations in a semiconductor
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Abstract
Data are presented which show eight excitonic density (Rabi) oscillations in an In0.1Ga0.9As/GaAs multiple quantum well at 5 K. Our time resolved, two-color pump-probe experimental technique for observing these oscillations is described. The quantum well sample geometry and linear spectrum are shown along with data characterizing the pump and probe pulses. Experimental data is shown to be in excellent agreement with our theoretical calculation of exciton density versus time, verifying the important affect of the Coulomb interaction between carriers in renormalizing the Rabi frequency. The theoretical calculations include the two-fold degenerate light-hole, heavy-hole, and valence bands in the Hartree-Fock form of the semiconductor Block equations, with all variables selected to conform to the experiment.
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Michael E. Donovan, Alex Schuelzgen, Kai Wundke, Rolf H. Binder, Johan Markus Lindberg, Hyatt M. Gibbs, Galina Khitrova, Nasser Peyghambarian, "Experimental observation of multiple excitonic optical Rabi oscillations in a semiconductor", Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); doi: 10.1117/12.349298; http://dx.doi.org/10.1117/12.349298
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KEYWORDS
Semiconductors

Excitons

Quantum wells

Polarization

Chemical species

Gallium arsenide

Optical amplifiers

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