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24 May 1999 Generation of THz electrical signals from nanostructures
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Abstract
We have fabricated vertical and in-plane nano-structures and measured THz signals from these structures. The vertical nano-structures have been fabricated by molecular beam epitaxy in a p-i-n diode. A superlattice structure is located in an i-region of the p-i-n diode. Carriers are photo-excited in the superlattice and accelerated by a built-in potential. The radiation was measured through a free-space electro-optic sampling, and shows rather strong radiation compared to the radiation from the bulk GaAs. The in-plane nano-structures have also fabricated as a photoconductive switch by micro-anodization process. The gap for the photoconductive switch is covered with a transparent insulator which realizes high bias voltage and ultrafast response. We also introduced current block layer under photo-absorbing layer to reduce slow component of current, which are caused by carriers excited deep inside the substrate. The ultrafast response was measured by an electro-optic sampling, and the slow component of the signal has dramatically reduced by this structure.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taro Itatani and Tadashi Nakagawa "Generation of THz electrical signals from nanostructures", Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); https://doi.org/10.1117/12.349289
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