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24 May 1999 Generation of THz electrical signals from nanostructures
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We have fabricated vertical and in-plane nano-structures and measured THz signals from these structures. The vertical nano-structures have been fabricated by molecular beam epitaxy in a p-i-n diode. A superlattice structure is located in an i-region of the p-i-n diode. Carriers are photo-excited in the superlattice and accelerated by a built-in potential. The radiation was measured through a free-space electro-optic sampling, and shows rather strong radiation compared to the radiation from the bulk GaAs. The in-plane nano-structures have also fabricated as a photoconductive switch by micro-anodization process. The gap for the photoconductive switch is covered with a transparent insulator which realizes high bias voltage and ultrafast response. We also introduced current block layer under photo-absorbing layer to reduce slow component of current, which are caused by carriers excited deep inside the substrate. The ultrafast response was measured by an electro-optic sampling, and the slow component of the signal has dramatically reduced by this structure.
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Taro Itatani and Tadashi Nakagawa "Generation of THz electrical signals from nanostructures", Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999);

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