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6 August 1999 Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment
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Mark S. Hybertsen, Muhammad A. Alam, Gleb E. Shtengel, Gregory L. Belenky, C. Lewis Reynolds Jr., Dmitri V. Donetsky, R. Kent Smith, Gene A. Baraff, Rudolf F. Kazarinov, James D. Wynn, and L. E. Smith "Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment", Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); https://doi.org/10.1117/12.356912
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