14 April 1999 Semiconductor laser diode array characterization by means of field intensity measurements
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Semiconductor laser diode arrays are becoming a widespread source for a large variety of applications, ranging from telecommunications to industry. In particular, the availability of low-cost high-power laser diode arrays makes it possible their use in industrial context for material cutting, welding, diagnostics and processing. In the above applications the exact control of the beam quality plays a very important role because it directly affects the reliability of the final result. We have developed a characterization technique which, starting from total intensity measurements on planes orthogonal to the beam propagation path, is able to deduce the working conditions of each laser setting up the array. The importance of this approach is twofold. First it allows a non destructive quality control on ready-to-use laser arrays; second it may represent a powerful tool for the detection of design problems in the array itself and in the bias circuitry as well. The problem is formulated as an inverse one and the solution is found by minimizing a proper functional. Several numerical experiments have been performed and the results clearly indicate the ability of the proposed approach tin identifying specific failures in a laser diode array, such as single element power drop.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luigi Zeni, Luigi Zeni, Antonello Cutolo, Antonello Cutolo, Rocco Pierri, Rocco Pierri, "Semiconductor laser diode array characterization by means of field intensity measurements", Proc. SPIE 3626, Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV, (14 April 1999); doi: 10.1117/12.345427; https://doi.org/10.1117/12.345427

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