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29 April 1999 64-channel flip-chip-mounted selectively oxidized GaAs VCSEL array for parallel optical interconnects
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Abstract
We have designed and fabricated a 64 channel optical module using a self-alignment flip-chip packaging technique for 2D GaAs epitaxial-side emitting vertical-cavity surface- emitting laser (VCSEL) array mounting without substrate removal on Si subcarrier. Light emission is obtained through a wet-chemically etched window in the Si subcarrier. The 2D independently addressable selectively oxidized GaAs laser array is arranged in an 8 X 8 matrix with a device pitch of 250 micrometers and each laser is supplied with two individual top contacts. This metallization scheme allows flip-chip mounting junction-side down on Si subcarrier. The VCSEL array chip is placed above the window in the Si subcarrier and is assembled using a self-aligned bonding technique with PbSn solder bumps. Arrays with 4 micrometers active diameter investigated before and after packaging show quite homogeneous optical and electrical continuous wave output characteristics exhibiting threshold currents of less than 1.1 mA and single-mode output powers of 2 mW. Driving characteristics of the lasers in the array are fully compatible to advanced 3.3 V CMOS technology. The modules are used to demonstrate free-space directional transmission applying beam steering.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Jung, Roger King, Roland Jaeger, Martin Grabherr, Franz Eberhard, Rudolf Roesch, Ulrich Martin, Dieter Wiedenmann, Heiko J. Unold, Rainer Michalzik, and Karl Joachim Ebeling "64-channel flip-chip-mounted selectively oxidized GaAs VCSEL array for parallel optical interconnects", Proc. SPIE 3627, Vertical-Cavity Surface-Emitting Lasers III, (29 April 1999); https://doi.org/10.1117/12.347096
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