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29 April 1999 850-nm oxide VCSEL development at Hewlett-Packard
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Abstract
Oxide confined VCSELs are being developed at Hewlett-Packard for the next-generation low cost fiber optics communication applications. Compared to the existing 850 nm implant confined VCSELs, the oxide VCSELs have lower operating voltages, higher slope efficiencies, and better modal bandwidth characteristics. Preliminary data on epitaxy and oxidation control uniformity, device performance, and reliability will be discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongyu Deng, James J. Dudley, Sui F. Lim, Chun Lei, Bing Liang, M. Tashima, Lee A. Hodge, Xuemei Zhang, John Herniman, and Robert W. Herrick "850-nm oxide VCSEL development at Hewlett-Packard", Proc. SPIE 3627, Vertical-Cavity Surface-Emitting Lasers III, (29 April 1999); https://doi.org/10.1117/12.347103
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