PROCEEDINGS VOLUME 3628
OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES | 23-29 JANUARY 1999
In-Plane Semiconductor Lasers III
IN THIS VOLUME

8 Sessions, 33 Papers, 0 Presentations
OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES
23-29 January 1999
San Jose, CA, United States
High-Power Lasers I
Proc. SPIE 3628, High-power Al-free coherent and incoherent diode lasers, 0000 (1 April 1999); https://doi.org/10.1117/12.344515
High-Power Lasers II
High-Power Lasers I
Proc. SPIE 3628, Diode lasers with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715 nm and 840 nm, 0000 (1 April 1999); https://doi.org/10.1117/12.344535
Proc. SPIE 3628, High reliability in 0.8-um high-power InGaAsP/InGaP/AlGaAs laser diodes with a broad waveguide, 0000 (1 April 1999); https://doi.org/10.1117/12.344543
Proc. SPIE 3628, High-power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure, 0000 (1 April 1999); https://doi.org/10.1117/12.344544
High-Power Lasers II
Proc. SPIE 3628, High-brightness broad-area lasers with high reliability for Yb-Er-fiber pumping applications, 0000 (1 April 1999); https://doi.org/10.1117/12.344545
Proc. SPIE 3628, Performance and lifetime of high-power diode lasers and diode laser systems, 0000 (1 April 1999); https://doi.org/10.1117/12.344546
Proc. SPIE 3628, Highly reliable 40-W cw InGaAlAs/GaAs 808-nm laser bars, 0000 (1 April 1999); https://doi.org/10.1117/12.344547
Proc. SPIE 3628, High-optical-intensity 2D AlGaAs laser arrays, 0000 (1 April 1999); https://doi.org/10.1117/12.344516
Novel Devices I
Proc. SPIE 3628, High-brightness flared lasers, 0000 (1 April 1999); https://doi.org/10.1117/12.344517
Proc. SPIE 3628, 1.6-W cw coherent power from large-index-step (delta n=0.1) antiguided laser arrays, 0000 (1 April 1999); https://doi.org/10.1117/12.344518
Proc. SPIE 3628, High-performance circular grating-coupled surface emitter with focused output beam, 0000 (1 April 1999); https://doi.org/10.1117/12.344519
Proc. SPIE 3628, Electro-optical investigations of strained InGaAs/GaAs double quantum well laser structures, 0000 (1 April 1999); https://doi.org/10.1117/12.344520
Novel Devices II
Proc. SPIE 3628, Temperature characteristics of light emission spectra and threshold currents of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers, 0000 (1 April 1999); https://doi.org/10.1117/12.344521
Proc. SPIE 3628, Nonabsorbing mirrors for AlGaAs quantum well lasers by impurity-free interdiffusion, 0000 (1 April 1999); https://doi.org/10.1117/12.344522
Proc. SPIE 3628, Multiple-wavelength lasers defined by stripe width using one-step impurity-free quantum well intermixing technique, 0000 (1 April 1999); https://doi.org/10.1117/12.344523
Proc. SPIE 3628, Fundamental-mode laser power rise by means of facet inclination, 0000 (1 April 1999); https://doi.org/10.1117/12.344524
Visible Lasers I
Proc. SPIE 3628, Three years of InGaN quantum-well lasers: commercialization already, 0000 (1 April 1999); https://doi.org/10.1117/12.344525
Visible Lasers II
Proc. SPIE 3628, Grating-based red lasers, 0000 (1 April 1999); https://doi.org/10.1117/12.344528
Proc. SPIE 3628, High-power red lasers for DVD-RAM drives, 0000 (1 April 1999); https://doi.org/10.1117/12.344529
Proc. SPIE 3628, 630-nm laser diode array for laser-beam printer formed by impurity diffusion, 0000 (1 April 1999); https://doi.org/10.1117/12.344530
Proc. SPIE 3628, High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy, 0000 (1 April 1999); https://doi.org/10.1117/12.344531
Proc. SPIE 3628, Integration of red, infrared, and blue light sources by wafer fusion, 0000 (1 April 1999); https://doi.org/10.1117/12.344532
Mid-IR Lasers I
Proc. SPIE 3628, Five years of quantum cascade lasers: progress and challenges, 0000 (1 April 1999); https://doi.org/10.1117/12.344533
Proc. SPIE 3628, Issues in mid-IR type-II interband cascade lasers, 0000 (1 April 1999); https://doi.org/10.1117/12.344536
Proc. SPIE 3628, Lead salt tunable diode lasers: key devices for high-sensitivity gas analysis, 0000 (1 April 1999); https://doi.org/10.1117/12.344537
Mid-IR Lasers II
Proc. SPIE 3628, 2.3- to 2.7-um room-temperature cw operation of InGaAsSb/AlGaAsSb broad-contact and single-mode ridge-waveguide SCH-QW diode lasers, 0000 (1 April 1999); https://doi.org/10.1117/12.344538
Proc. SPIE 3628, Optically pumped mid-infrared type-II lasers: advances in high-temperature performance, 0000 (1 April 1999); https://doi.org/10.1117/12.344539
Proc. SPIE 3628, Optically pumped InAs/InGaSb type-II quantum-well lasers, 0000 (1 April 1999); https://doi.org/10.1117/12.344540
Proc. SPIE 3628, Comparison of mid-infrared laser diode active regions, 0000 (1 April 1999); https://doi.org/10.1117/12.344541
High-Power Lasers II
Proc. SPIE 3628, High-power InAlGaAs laser diodes with high efficiency at 980 nm, 0000 (1 April 1999); https://doi.org/10.1117/12.344542
Back to Top