Electro-optical investigations of strained InGaAs/GaAs double quantum well laser structures

Achim Golombek; Rudiger Goldhahn; Gerhard Gobsch

doi:10.1117/12.344520

1 April 1999 Electro-optical investigations of strained InGaAs/GaAs double quantum well laser structures

Achim Golombek, Rudiger Goldhahn, Gerhard Gobsch

Proceedings Volume 3628, In-Plane Semiconductor Lasers III; (1999) https://doi.org/10.1117/12.344520
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Strained Al-free InGaAs/GaAs quantum well (QW) structures are now under intensive investigation due to the potential application in high power laser diodes. During their MOCVD growth the position of the pn junction is shifted towards the p-doped barriers due to the unintentional n-doping of the nominally intrinsic region. Although this shift deteriorates the electro-optical properties it is difficult to detect this effect. Systematic optical investigations performed on coupled double quantum well (CDQW) structures as a function of applied dc bias voltage demonstrate that a combination of photocurrent (PC) and electroreflectance (ER) measurements is not only capable of revealing this effect but also allows the determination of many details of the CDQW subband structure. A comparison of these experiments with calculated transition matrix elements makes a further optimization of both the layer structure and the growth process possible.

Citation Download Citation

Achim Golombek, Rudiger Goldhahn, and Gerhard Gobsch "Electro-optical investigations of strained InGaAs/GaAs double quantum well laser structures", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344520

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