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1 April 1999 Electro-optical investigations of strained InGaAs/GaAs double quantum well laser structures
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Abstract
Strained Al-free InGaAs/GaAs quantum well (QW) structures are now under intensive investigation due to the potential application in high power laser diodes. During their MOCVD growth the position of the pn junction is shifted towards the p-doped barriers due to the unintentional n-doping of the nominally intrinsic region. Although this shift deteriorates the electro-optical properties it is difficult to detect this effect. Systematic optical investigations performed on coupled double quantum well (CDQW) structures as a function of applied dc bias voltage demonstrate that a combination of photocurrent (PC) and electroreflectance (ER) measurements is not only capable of revealing this effect but also allows the determination of many details of the CDQW subband structure. A comparison of these experiments with calculated transition matrix elements makes a further optimization of both the layer structure and the growth process possible.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Achim Golombek, Rudiger Goldhahn, and Gerhard Gobsch "Electro-optical investigations of strained InGaAs/GaAs double quantum well laser structures", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344520
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